Electronic devices are shrinking, and scanning transmission electron microscopy is essential for the characterization of inoperando nanoscale devices. This paper demonstrates the combined capabilities of 4D-STEM and STEM-EBIC for measuring localized electronic properties (electric field strength, field direction, built-in potential, and minority carrier diffusion length) in an in-operando nanoscale device. Quantitative analysis supported by simulations enables robust interpretation of local electric fields and potential gradients. STEM-EBIC measurements at different thicknesses show a regime where the effective diffusion length of minority carriers is entirely dominated by surface recombination. In situ biasing of a symmetrically doped 4 × 1017 cm− 3 p–n diode shows how 4D-STEM and STEM-EBIC complement each other for localized interpretation of electronic components.
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